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| (R) BD179 NPN SILICON TRANSISTOR s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR s APPLICATION GENERAL PURPOSE SWITCHING DESCRIPTION The BD179 is a silicon epitaxial planar NPN transistor in Jedec SOT-32 plastic package, designed for medium power linear and switching applications. SOT-32 3 2 1 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T c 25 o C Storage Temperature Max. Operating Junction Temperature Value 80 80 5 3 7 30 -65 to 150 150 Unit V V V A A W o o C C December 2000 1/5 BD179 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 4.16 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = 80 V V EB = 5 V I C = 100 mA IC = 1 A IC = 1 A I C = 150 mA IC = 1 A I C = 150 mA I C = 250 mA I B = 0.1 A V CE = 2 V V CE = 2 V V CE = 2 V VCE = 2 V VCE = 10 V group 16 40 15 100 3 250 MHz 80 0.8 1.3 Min. Typ. Max. 100 1 Unit A mA V V V V CEO(sus) Collector-Emitter Sustaining Voltage V CE(sat) V BE h FE h FE fT Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain h FE Groups Transition Frequency * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area Derating Curves 2/5 BD179 DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 3/5 BD179 SOT-32 (TO-126) MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F G H 3 4.15 3.8 3.2 2.54 0.118 7.4 10.5 0.7 0.49 2.4 1.0 15.4 2.2 4.65 0.163 0.150 0.126 0.100 TYP. MAX. 7.8 10.8 0.9 0.75 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.019 0.040 0.039 0.606 0.087 0.183 inch TYP. MAX. 0.307 0.445 0.035 0.030 0.106 0.050 0.629 DIM. H2 c1 0016114 4/5 BD179 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5 |
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